| 摘要 |
1,261,067. Zener diodes. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 25 June, 1969 [27 June, 1968], No. 32065/69. Heading H1K. A Zener diode is formed by diffusing into one surface of a semi-conductor body side by side regions of opposite conductivity type to form (by lateral diffusion) a PN junction perpendicular to the surface. The properties of the diode are determined by the diffused regions since these are made to have lower resistivity than the substrate. The diffused zones may be T-shaped in plan, the small active junction being formed at the insection of the two stems and electrodes being provided on the bars. The diode may be formed in a junction-isolated integrated circuit which may also include transistors and diffused resistors. In one embodiment one of the diode zones is formed at the same time as an isolation zone and the other at the same time as the emitter zone of a transistor. In another embodiment one of the diode zones is formed simultaneously with the base zone of a transistor and the other simultaneously with the emitter zone of the transistor.
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