| 摘要 |
1,186,834. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 19 June, 1968 [22 June, 1967], No. 29277/68. Heading H1K. In a method of producing diode units, each comprising a plurality of individual semiconductor diodes connected in series, a plurality of semi-conductor wafers each having a PN junction extending over its whole cross-section, have their surfaces parallel to the junctions tinplated and are laid with these tinned surfaces one on top of the other, after which they are soldered together under slight pressure to form a soldered stack of wafers which is then divided into separate diode units by a cutting process such as by sawing or ultrasonic cutting. The tin-plated layer is about 12 Ám thick, and the soldering temperature is low, as in the range 250‹ to 300‹ C., so that no alloying of the contact material with the semi-conductor body takes place. The tinning process may be carried out in a galvanic bath. Nickel contacts are applied. In the case where the diode units comprise only two individual diodes, these diodes are unilaterally tinned, on those surfaces to be joined, by clipping or cementing them on to a plate of insulating material such as glass during the electroplating process. |
