| 摘要 |
<p>The present invention is directed to a method for fabricating a photovoltaic device, comprising depositing a TCO-layer on a substrate and annealing the TCO layer by laser irradiation having irradiation parameters, characterized in that the irradiation parameters are selected such that the annealing comprises increasing the haze% of the TCO layer compared to the as deposited TCO layer. Additionally, the present invention is directed to a TCO layer having a haze% of at least 2% in the visible light wavelength range and a surface roughness of less than 10 nanometer RMS. Further the present invention is directed to a photovoltaic device comprising such TCO-layer.</p> |
