| 摘要 |
PURPOSE: A resist forming method is provided to simultaneously satisfy a high sensitivity, a small line edge roughness, and a sum reduction of an unexposed part even by a ultrafine pattern formation. CONSTITUTION: A resist forming method comprises: a step of forming a resist film by using a polymer compound with a repeating unit indicated in chemical formula 1, a phenolic compound with two or more benzene rings and four or more alkoxymethyl groups, and a crosslinking negative chemical-amplification resist composition comprising a compound which can generate acid at active ray or radiation irradiation; a step of exposing the film; and a step of developing the film by using a developing solution which contains C7-8 ester-based solvent. In chemical formula 1, A is a hydrogen atom, a cycloalkyl group, a halogen atom, or a cyano group; R is a halogen atom, alkyl group, cycloalkyl group, aryl group, alkenyl group, aralkyl group, alkoxy group, alkyl carbonyl oxy group, or alkyl sulfonyl oxy group and can be form a ring by being combined to each other; and b is an integer from 0-2. |
