摘要 |
A light emitting device according to the embodiment includes a first light emitting structure (10) including a first conductive type first semiconductor layer (11), a first active layer (12) under the first conductive type first semiconductor layer (11), and a second conductive type second semiconductor layer (13) under the first active layer (12); a first reflective electrode (17) under the first light emitting structure (10); a second light emitting structure (20) including a first conductive type third semiconductor layer (21), a second active layer (22) under the first conductive type third semiconductor layer (21), and a second conductive type fourth semiconductor layer (23) under the second active layer (22); a second reflective electrode (27) under the second light emitting structure (20); a contact part (43) that electrically connects the first conductive type first semiconductor layer (11) of the first light emitting structure (10) to the second reflective electrode (27); and a first insulating ion implantation layer (41) between the contact part (43) and the second conductive type second semiconductor layer (13). |