METHOD FOR CHEMICAL MECHANICAL POLISHING TUNGSTEN

摘要

PURPOSE: A method for chemically and mechanically polishing tungsten of a semiconductor substrate is provided to rapidly improve a tungsten removing speed by using an unselective chemical mechanical polishing composition. CONSTITUTION: A substrate with tungsten is provided. A chemical mechanical polishing slurry composition is provided. A chemical mechanical polishing pad with a polishing surface is provided. A dynamic contact is generated in an interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa. The chemical mechanical polishing slurry composition is distributed to the interface between the chemical mechanical polishing pad and the substrate or near the chemical mechanical polishing pad. The substrate is polished and a part of tungsten is removed from the substrate.