发明名称 |
FERROELECTRIC DEVICE |
摘要 |
A ferroelectric device comprises: a silicon substrate (a first substrate) 10; a lower electrode (a first electrode) 14a formed on one surface side of first substrate 10; a ferroelectric film 14b formed on a surface of lower electrode 14a opposite to first substrate 10 side; and an upper electrode (a second electrode) 14c formed on a surface of ferroelectric film 14b opposite to lower electrode 14a side. The ferroelectric film 14b is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer 14d formed of a material with better lattice matching with ferroelectric film 14b than silicon and provided directly below the lower electrode 14a. The first substrate 10 is provided with a cavity 10a that exposes a surface of shock absorbing layer 14d opposite to lower electrode 14a side. |
申请公布号 |
EP2562837(A1) |
申请公布日期 |
2013.02.27 |
申请号 |
EP20110771971 |
申请日期 |
2011.04.18 |
申请人 |
PANASONIC CORPORATION |
发明人 |
OGAWA, JUNYA;YAMAUCHI, NORIHIRO;MATSUSHIMA, TOMOAKI;AIZAWA, KOICHI |
分类号 |
B81B7/02;G01J1/02;G01P15/09;H01L41/08;H01L41/113;H01L41/18;H01L41/187;H01L41/22;H01L41/23;H01L41/319;H01L41/39;H02N2/18 |
主分类号 |
B81B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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