METHOD FOR MANUFACTURING OF SILICON CARBIDE SUBSTRATE

摘要

PURPOSE: A manufacturing method of a silicon carbide substrate is provided to reduce time and cost required for pressure reducing or cooling since the inside of a deposition chamber is not decompressed or cooled down with an initial condition during a series of deposition processes. CONSTITUTION: A manufacturing method of a silicon carbide substrate comprises steps of: alternately depositing a silicon carbide layer and a sacrificial layer on a base substrate(S10); removing the base substrate(S30); and removing the sacrificial layer in an oxygen atmosphere of a high temperature(S40). The sacrificial layer is a pyrolytic carbon layer. After the silicon carbide and the sacrificial layer are alternately deposited, the deposited silicon carbide layer and the sacrificial layer are cut to expose the lateral surface of the sacrificial layer. [Reference numerals] (S10) Depositing a silicon carbide layer and a sacrificial layer on a base substrate; (S20) Cutting into a desired shape; (S30) Removing the base substrate; (S40) Removing the sacrificial layer; (S50) Polishing the surface; (S60) Removing a natural oxide layer; (S70) Cleaning and drying