| 摘要 |
1,270,227. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1971 [22 Jan., 1970], No. 267/71. Heading H1K. Ion bombardment through an apertured metal layer on the surface of a semi-conductor body forms a PN junction, which is subsequently passivated by superficially oxidizing the metal to such an extent that the oxide formed at the edge of the layer overlies the junction. In the embodiment the junction is the emitter junction of a junction-isolated transistor. After forming a junction-isolated N-type epitaxial collector region and base region 34 by known techniques, apertures are formed in the oxide 35 (Fig. 3.17) over the base zone and a contact area of the collector. Aluminium is deposited overall and etched back to form the collector connection 37 which is then anodized. Aluminium is again deposited overall and etched to fashion a base connection 39 which forms an annular contact with the base zone. Phosphorus ions are implanted into the area of this zone exposed within the annulus to form the emitter zone 41 and the base connection then anodized, 49, to insulate the connection and passivate the emitter junction. Further aluminium is deposited and etched to form emitter connection 43 which is in turn anodized. Additional interconnecting tracks 47 of anodized aluminium may be formed as desired. |
