SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD MANUFACTURING THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve luminous efficiency by increasing a contact area between a conductive thin film and an electrode through a contact pattern. CONSTITUTION: An N-type semiconductor layer(240) is formed on a substrate. An active layer(250) is formed on the N-type semiconductor layer. A P-type semiconductor layer(260) is formed on the active layer. A transparent electrode layer(270) is formed on the P-type semiconductor layer and is formed by laminating a conductive thin film and an insulation thin film. A first electrode is formed in a first region of the transparent electrode layer. A contact pattern is formed in the first region of the transparent electrode layer and contacts the conductive thin film with a first electrode.