发明名称 |
Integrated nanostructure-based non-volatile memory fabrication |
摘要 |
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure coatings are applied over a substrate at a memory array area and a peripheral circuitry area. Various processes for removing the nanostructure coating from undesired areas of the substrate, such as target areas for select gates and peripheral transistors, are provided. One or more nanostructure coatings are formed using self-assembly based processes to selectively form nanostructures over active areas of the substrate in one example. Self-assembly permits the formation of discrete lines of nanostructures that are electrically isolated from one another without requiring patterning or etching of the nanostructure coating.
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申请公布号 |
US8383479(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100840081 |
申请日期 |
2010.07.20 |
申请人 |
SANDISK TECHNOLOGIES INC.;PURAYATH VINOD ROBERT;KAI JAMES K.;HIGASHITANI MASAAKI;ORIMOTO TAKASHI;MATAMIS GEORGE;CHIEN HENRY |
发明人 |
PURAYATH VINOD ROBERT;KAI JAMES K.;HIGASHITANI MASAAKI;ORIMOTO TAKASHI;MATAMIS GEORGE;CHIEN HENRY |
分类号 |
H01L21/8247 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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