发明名称 |
Thin channel device and fabrication method with a reverse embedded stressor |
摘要 |
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer. A removable buried layer is provided on or in the second semiconductor layer. A gate structure with side spacers is formed on the first semiconductor layer. Recesses are formed down to the removable buried layer in areas for source and drain regions. The removable buried layer is etched away to form an undercut below the dielectric layer below the gate structure. A stressor layer is formed in the undercut, and source and drain regions are formed.
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申请公布号 |
US8383474(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100789699 |
申请日期 |
2010.05.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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