发明名称 Methods of processing a thermal interface material
摘要 Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).
申请公布号 US8383459(B2) 申请公布日期 2013.02.26
申请号 US20080145364 申请日期 2008.06.24
申请人 INTEL CORPORATION;SUPRIYA LAKSHMI;WENINGER JESSICA;ARANA LEONEL;MUSTAPHA LATEEF 发明人 SUPRIYA LAKSHMI;WENINGER JESSICA;ARANA LEONEL;MUSTAPHA LATEEF
分类号 H01L21/00 主分类号 H01L21/00
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