发明名称 |
Methods of writing partial page data in a non-volatile memory device |
摘要 |
A method of writing partial page data in a non-volatile memory device includes, reading data from a second block when the size of a last page of data to be written in a page of a first block is smaller than a size of the page of the first block, wherein a size of the read data is given by the size of the page of the first block minus the size of the last page of data; storing together data of the last page and the data read from the second block in a buffer; and writing the data stored in the buffer in the first block.
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申请公布号 |
US8386696(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20080069764 |
申请日期 |
2008.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM JIN-HYUK;CHOI CHANG-EUN;KIM YOUNG-GON |
发明人 |
KIM JIN-HYUK;CHOI CHANG-EUN;KIM YOUNG-GON |
分类号 |
G06F12/00;G06F13/00;G06F13/28 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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