发明名称 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride |
摘要 |
By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.
|
申请公布号 |
US8384217(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201213487647 |
申请日期 |
2012.06.04 |
申请人 |
GLOBALFOUNDRIES INC.;STRECK CHRISTOF;KAHLERT VOLKER |
发明人 |
STRECK CHRISTOF;KAHLERT VOLKER |
分类号 |
H01L21/48 |
主分类号 |
H01L21/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|