发明名称 |
Schottky diode structure with silicon mesa and junction barrier Schottky wells |
摘要 |
A power diode having a silicon mesa atop the drift region includes a first contact positioned on the silicon mesa. The silicon mesa is highly doped p-type or n-type, and the anode may be formed on the mesa. The mesa may include two separate silicon layers, one of which is a Schottky barrier height layer. Under a forward bias, the silicon mesa provides carriers to achieve desirable forward current characteristics. The substrate has a significantly reduced thickness. The diode achieves reverse voltage blocking capability by implanting junction barrier Schottky wells within the body of the diode. The diode utilizes a deeper portion of the drift region to support the reverse bias. The method of forming the diode with a silicon mesa includes forming the mesa within a window on the diode or by thermally or mechanically bonding the silicon layer to the drift region.
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申请公布号 |
US8384181(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20070673117 |
申请日期 |
2007.02.09 |
申请人 |
CREE, INC.;ZHANG QINGCHUN;RYU SEI-HYUNG |
发明人 |
ZHANG QINGCHUN;RYU SEI-HYUNG |
分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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地址 |
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