发明名称 |
Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel |
摘要 |
Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
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申请公布号 |
US8384130(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201113137291 |
申请日期 |
2011.08.03 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;JEON WOO CHUL;PARK KI YEOL;PARK YOUNG HWAN |
发明人 |
JEON WOO CHUL;PARK KI YEOL;PARK YOUNG HWAN |
分类号 |
H01L29/739;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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