| 摘要 |
A nitride semiconductor device including: a substrate; a nitride semiconductor layer formed on the substrate and having a heterojunction interface; and a recess portion formed on the nitride semiconductor layer, wherein the nitride semiconductor layer includes: a carrier transit layer, which has a composition represented by the formula: Alx1Inx2Ga1−x1−x2N, (0≦̸x1≦̸1, 0≦̸x2≦̸1, 0≦̸(x1+x2)≦̸1); and a carrier supply layer including: a first layer formed on the carrier transit layer, said first layer having a composition represented by the formula: AlyGa1−yN, (0<y≦̸1, x1<y); a second layer formed on the first layer, said second layer containing GaN; and a third layer formed on the second layer, said third layer having a composition represented by the formula: AlzGa1−zN, (0<z≦̸1, x1<z), and wherein the recess portion is formed to penetrate the third layer and expose a surface of the second layer at a bottom portion of the recess portion.
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