METHOD OF FORMING JUNCTION REGION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a junction region of a semiconductor device is provided to simplify a forming process by reducing the number of mask processes using a tilt ion implantation process. CONSTITUTION: First to fifth junction regions are defined on a semiconductor substrate. The first junction region is interposed between the first junction regions. A first impurity region(131a) is formed by injecting a first impurity into the first to fourth junction regions. A second impurity region(133a) is formed by injecting a second impurity with a first tilt ion implantation process. A third impurity region(135a) is formed by injecting a third impurity with a second tilt ion implantation process.