| 摘要 |
PURPOSE: A substrate processing device and a method thereof are provided to install a magnet unit on the outside of a first electrode unit, thereby forming uniform plasma with high density. CONSTITUTION: A first electrode unit(161) is installed on the external wall of a housing. The first electrode unit receives a voltage from the outside. Magnet units(181,182) are installed on one side of the first electrode unit. The magnet units generate magnetic fields in the housing. A plasma source unit generates plasma using a processing gas. |
