Nonvolatile memory device using variable resistive element, memory system comprising the same and driving method of the nonvolatile memory device

摘要

In one embodiment, the semiconductor device, includes a non-volatile memory cell array, and a control unit configured to generate a mode signal indicating if a flash mode has been enabled. A write circuit is configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received.