SINGLE ELECTRON TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A single electron transistor and a manufacturing method thereof are provided to reduce the size of a quantum dot by surrounding the quantum dot with a tunneling insulation layer and a gate insulation layer in a trench. CONSTITUTION: A semiconductor substrate includes a protrusion on one side thereof. A source region(14) is formed on the protrusion of the substrate. A sidewall insulation layer(22) is formed on the etched substrate and a part of the sidewall of the protrusion. A drain region(34) faces the source region and is more protrusive than the sidewall insulation layer. The gate insulation layer surrounds the front, the rear, and the top of the quantum dot.