发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.
|
申请公布号 |
US8384085(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100851097 |
申请日期 |
2010.08.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KIMURA HAJIME;SAKATA JUNICHIRO;TOYOTAKA KOHEI |
发明人 |
KIMURA HAJIME;SAKATA JUNICHIRO;TOYOTAKA KOHEI |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|