发明名称 Semiconductor device and method for manufacturing the same
摘要 An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.
申请公布号 US8384085(B2) 申请公布日期 2013.02.26
申请号 US20100851097 申请日期 2010.08.05
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KIMURA HAJIME;SAKATA JUNICHIRO;TOYOTAKA KOHEI 发明人 KIMURA HAJIME;SAKATA JUNICHIRO;TOYOTAKA KOHEI
分类号 H01L29/04 主分类号 H01L29/04
代理机构 代理人
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