发明名称 Semiconductor device
摘要 The present invention is to provide a semiconductor device that achieves high mechanical strength without reducing the circuit scale and that can prevent the data from being forged and altered illegally while suppressing the cost. The present invention discloses a semiconductor device typified by an ID chip that is formed from a semiconductor thin film including a first region with high crystallinity and a second region with the crystallinity inferior to the first region. Specifically, a TFT (thin film transistor) of a circuit requiring high-speed operation is formed by using the first region and a memory element for an identifying ROM is formed by using the second region.
申请公布号 US8384081(B2) 申请公布日期 2013.02.26
申请号 US20100753155 申请日期 2010.04.02
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI SHUNPEI;DAIRIKI KOJI 发明人 YAMAZAKI SHUNPEI;DAIRIKI KOJI
分类号 H01L31/20;G06K19/07;G06K19/077;G06K19/10;G11C17/12;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/10;H01L27/12;H01L27/13;H01L29/04;H01L29/786 主分类号 H01L31/20
代理机构 代理人
主权项
地址