| 发明名称 |
Resistive memory device |
| 摘要 |
Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. In an embodiment, a bit line is formed of copper using a damascene technique, and when the copper bit line, a copper stud may be formed around the copper bit line.
|
| 申请公布号 |
US8384060(B2) |
申请公布日期 |
2013.02.26 |
| 申请号 |
US20080273140 |
申请日期 |
2008.11.18 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD.;RYOO KYUNG-CHANG;OH JAE-HEE;PARK JUNG-HOON;KIM HYEONG-JUN;LIM DONG-WON |
发明人 |
RYOO KYUNG-CHANG;OH JAE-HEE;PARK JUNG-HOON;KIM HYEONG-JUN;LIM DONG-WON |
| 分类号 |
H01L47/00;G11C11/00;H01L21/02;H01L21/336;H01L29/06 |
主分类号 |
H01L47/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
