发明名称 |
Plasma etching method, plasma etching apparatus and storage medium |
摘要 |
There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.
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申请公布号 |
US8383001(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100707957 |
申请日期 |
2010.02.18 |
申请人 |
TOKYO ELECTRON LIMITED;MOCHIKI HIROMASA;OOYA YOSHINOBU;YAMAZAKI FUMIO;HAGA TOSHIO |
发明人 |
MOCHIKI HIROMASA;OOYA YOSHINOBU;YAMAZAKI FUMIO;HAGA TOSHIO |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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