| 摘要 |
A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15). |
