发明名称 |
Self aligned sidewall gate GaN HEMT |
摘要 |
A method of fabricating a GaN HEMT includes growing a first epitaxial layer on a substrate, growing a second epitaxial layer on the first epitaxial layer, growing a third epitaxial layer on the second epitaxial layer, depositing a first dielectric film on the third epitaxial layer, using dielectric films to form a first sidewall dielectric spacer, forming a sidewall gate adjacent the first sidewall dielectric spacer. The sidewall gate may be made to be less than 50 nm in length.
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申请公布号 |
US8383471(B1) |
申请公布日期 |
2013.02.26 |
申请号 |
US201113083916 |
申请日期 |
2011.04.11 |
申请人 |
HRL LABORATORIES, LLC;SHINIHARA KEISUKE;CORRION ANDREA;MICOVIC MIROSLAV;HASHIMOTO PAUL B.;BURNHAM SHAWN D.;KAZEMI HOOMAN;WILLADSEN PETER J.;REGAN DEAN C. |
发明人 |
SHINIHARA KEISUKE;CORRION ANDREA;MICOVIC MIROSLAV;HASHIMOTO PAUL B.;BURNHAM SHAWN D.;KAZEMI HOOMAN;WILLADSEN PETER J.;REGAN DEAN C. |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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