发明名称 Memory circuit and method of operating the same
摘要 The present application discloses a memory circuit having a first data line configured to carry a first data line signal and a second data line configured to carry a second data line signal. Further, a first driver is coupled to the first data line and the second data line and configured to establish a first current path for the first data line responsive to the second data line signal. Similarly, a second driver is coupled to the first data line and the second data line and configured to establish a second current path for the second data line responsive to the first data line signal. The memory circuit further has a first driver enabling line configured to selectively enable the first driver and a second driver enabling line configured to selectively enable the second driver.
申请公布号 US8385136(B2) 申请公布日期 2013.02.26
申请号 US20100913087 申请日期 2010.10.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;LEE CHENG HUNG;YANG JUNG-PING 发明人 LEE CHENG HUNG;YANG JUNG-PING
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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