发明名称 Non-volatile memory device having stacked structure, and memory card and electronic system including the same
摘要 Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.
申请公布号 US8385122(B2) 申请公布日期 2013.02.26
申请号 US20100656043 申请日期 2010.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD.;KIM WON-JOO;PARK YOON-DONG;SUNG JUNG-HUN;KYOUNG YONG-KOO;CHOI SANG-MOO;LEE TAE-HEE 发明人 KIM WON-JOO;PARK YOON-DONG;SUNG JUNG-HUN;KYOUNG YONG-KOO;CHOI SANG-MOO;LEE TAE-HEE
分类号 G11C16/04;H01L29/788 主分类号 G11C16/04
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