发明名称 |
Semiconductor device with field effect transistor and manufacturing method thereof |
摘要 |
A semiconductor device includes: a semiconductor substrate in which a SiGe layer having a first width in a channel direction is embedded in a channel forming region; gate insulating film formed on the channel forming region; a gate electrode formed on the gate insulating film and having a region protruding from a forming region of the SiGe layer with a second width wider than the first width; and source/drain regions having extension regions formed on the semiconductor substrate which sandwiches the channel forming region, thereby forming a field effect transistor, wherein the extension region is apart from the SiGe layer so that a depletion layer extending from a junction surface between the extension region and the semiconductor substrate does not reach the SiGe layer.
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申请公布号 |
US8384167(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100858029 |
申请日期 |
2010.08.17 |
申请人 |
SONY CORPORATION;KIKUCHI YOSHIAKI;WAKABAYASHI HITOSHI |
发明人 |
KIKUCHI YOSHIAKI;WAKABAYASHI HITOSHI |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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