发明名称 |
InGaAIN light-emitting device and manufacturing method thereof |
摘要 |
There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.
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申请公布号 |
US8384100(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20060915304 |
申请日期 |
2006.05.26 |
申请人 |
LATTICE POWER (JIANGXI) CORPORATION;JIANG FENGYI;WANG LI;XIONG CHUANBING;FANG WENQING;LIU HECHU;ZHOU MAOXING |
发明人 |
JIANG FENGYI;WANG LI;XIONG CHUANBING;FANG WENQING;LIU HECHU;ZHOU MAOXING |
分类号 |
H01L21/00;H01L33/06;H01L33/10;H01L33/12;H01L33/16;H01L33/32;H01L33/36 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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