发明名称 |
High endurance non-volatile memory cell and array |
摘要 |
Systems of electrically programmable and erasable memory cell are disclosed. In one exemplary implementation, a cell may have two storage transistors in a substrate of semiconductor material of a first cooductivity type The first storage transistor is of the type having a first region and a second region each of a second conductivity type in the substrate The second storage transistor is of the type having a third region and a fourth region each of a second conductivity type in the substrate. Arrays formed of such memory cells and non-volatile memory cells are also disclosed.
|
申请公布号 |
US8384147(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201113097766 |
申请日期 |
2011.04.29 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC.;DO NHAN;LEVI AMITAY |
发明人 |
DO NHAN;LEVI AMITAY |
分类号 |
H01L29/792;G11C7/00;H01L29/788 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|