发明名称 LASER PROCESSING METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGES
摘要 PURPOSE: A method for processing a semiconductor package with laser is provided to accurately maintain each hole by preventing a contact failure between packages and connection between solder balls. CONSTITUTION: Laser is irradiated to a hole array. An irradiation interval is two pitches or more. A plurality of holes are formed over two pitches in a first irradiation stage. A first type hole forming stage includes a second irradiation stage(S130). A plurality of holes are formed with one pitch by irradiating laser in a second type hole forming stage(S140). [Reference numerals] (AA) Start; (BB) Is it expected that the additional collapse of a barrier part dividing between holes; (CC) End; (S120) Is a heat-affected zone overlapped area?; (S130) First type hole forming stage; (S140) Second type hole forming stage
申请公布号 KR101236999(B1) 申请公布日期 2013.02.26
申请号 KR20110105269 申请日期 2011.10.14
申请人 HANMISEMICONDUCTOR CO., LTD. 发明人 SHIM, KI BON
分类号 H01L21/50;B23K26/38;H01L23/12;H01L23/48 主分类号 H01L21/50
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