发明名称 |
LASER PROCESSING METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGES |
摘要 |
PURPOSE: A method for processing a semiconductor package with laser is provided to accurately maintain each hole by preventing a contact failure between packages and connection between solder balls. CONSTITUTION: Laser is irradiated to a hole array. An irradiation interval is two pitches or more. A plurality of holes are formed over two pitches in a first irradiation stage. A first type hole forming stage includes a second irradiation stage(S130). A plurality of holes are formed with one pitch by irradiating laser in a second type hole forming stage(S140). [Reference numerals] (AA) Start; (BB) Is it expected that the additional collapse of a barrier part dividing between holes; (CC) End; (S120) Is a heat-affected zone overlapped area?; (S130) First type hole forming stage; (S140) Second type hole forming stage |
申请公布号 |
KR101236999(B1) |
申请公布日期 |
2013.02.26 |
申请号 |
KR20110105269 |
申请日期 |
2011.10.14 |
申请人 |
HANMISEMICONDUCTOR CO., LTD. |
发明人 |
SHIM, KI BON |
分类号 |
H01L21/50;B23K26/38;H01L23/12;H01L23/48 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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