| 发明名称 |
Etching method and recording medium |
| 摘要 |
An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
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| 申请公布号 |
US8383519(B2) |
申请公布日期 |
2013.02.26 |
| 申请号 |
US20080526471 |
申请日期 |
2008.02.05 |
| 申请人 |
TOKYO ELECTRON LIMITED;NOZAWA TOSHIHISA;MIYATANI KOTARO;HORI TOSHIYASU;HIROSE SHIGEKAZU |
发明人 |
NOZAWA TOSHIHISA;MIYATANI KOTARO;HORI TOSHIYASU;HIROSE SHIGEKAZU |
| 分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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