发明名称 |
High-density nonvolatile memory and methods of making the same |
摘要 |
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; forming a first dielectric antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and forming a second conductor above the first dielectric antifuse.
|
申请公布号 |
US8383478(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201113195518 |
申请日期 |
2011.08.01 |
申请人 |
SANDISK 3D LLC;HERNER SCOTT BRAD;MAHAJANI MAITREYEE |
发明人 |
HERNER SCOTT BRAD;MAHAJANI MAITREYEE |
分类号 |
H01L21/336;G11C;G11C5/02;H01L21/00;H01L21/331;H01L21/82;H01L21/8238;H01L23/48;H01L27/102;H01L27/148;H01L29/94;H01L31/0392;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|