发明名称 Process gas delivery for semiconductor process chambers
摘要 Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.
申请公布号 US8382897(B2) 申请公布日期 2013.02.26
申请号 US201213456189 申请日期 2012.04.25
申请人 APPLIED MATERIALS, INC.;SANGAM KEDARNATH;NGUYEN ANH N. 发明人 SANGAM KEDARNATH;NGUYEN ANH N.
分类号 C30B25/14 主分类号 C30B25/14
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