| 摘要 |
Certain embodiments provide a method for manufacturing a solid state imaging device, the method including: forming a plurality of first semispherical lens bodies; forming a second transparent resin layer; and forming a second lens body. The plurality of first semispherical lens bodies are respectively formed on a plurality of photodiode layers formed on a principal surface of a semiconductor substrate. The second transparent resin layer is a resin layer having an etching rate higher than that of the first lens body, and is formed so that the semiconductor substrate including the plurality of first lens bodies is covered with the second transparent resin layer. The second lens bodies are formed on a surface except the top part of each of the first lens bodies by etching an entire surface of the second transparent resin layer until top parts of the first lens bodies are exposed.
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