发明名称 |
Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing |
摘要 |
A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further includes forming a non-uniform fixed charge distribution in the gate dielectric. The method further includes forming a gate structure on the gate dielectric.
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申请公布号 |
US8383443(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US20100780193 |
申请日期 |
2010.05.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J. |
发明人 |
ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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