发明名称 Method for fabricating through substrate vias in semiconductor substrate
摘要 Methods are provided for fabricating integrated circuit systems that include forming integrated circuits in and on a semiconductor substrate. Via holes are etched into a front surface of the semiconductor substrate and are filled with a conductive material. A carrier wafer having a layer of adhesive thereon is provided and an imprinted pattern is formed in the layer of adhesive. The front surface of the semiconductor substrate is bonded to the carrier wafer with the patterned layer of adhesive. A portion of a back surface of the semiconductor substrate is removed to expose a portion of the conductive material and the thinned back surface is attached to a second substrate. The semiconductor substrate is then de-bonded from the carrier wafer.
申请公布号 US8383460(B1) 申请公布日期 2013.02.26
申请号 US201113243502 申请日期 2011.09.23
申请人 GLOBALFOUNDRIES, INC.;YIM MYUNG JIN 发明人 YIM MYUNG JIN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址