发明名称 Bi-directional ESD protection circuit
摘要 A structure is designed with an external terminal (100) and a reference terminal (102). A first transistor (106) is formed on a substrate. The first transistor has a current path coupled between the external terminal and the reference terminal. A second transistor (118) has a current path coupled between the external terminal and the substrate. A third transistor (120) has a current path coupled between the substrate and the reference terminal.
申请公布号 US8384127(B1) 申请公布日期 2013.02.26
申请号 US20000498677 申请日期 2000.02.07
申请人 TEXAS INSTRUMENTS INCORPORATED;STEINHOFF ROBERT;BRODSKY JONATHAN S.;VROTSOS THOMAS A. 发明人 STEINHOFF ROBERT;BRODSKY JONATHAN S.;VROTSOS THOMAS A.
分类号 H01L29/747 主分类号 H01L29/747
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