发明名称 |
Bi-directional ESD protection circuit |
摘要 |
A structure is designed with an external terminal (100) and a reference terminal (102). A first transistor (106) is formed on a substrate. The first transistor has a current path coupled between the external terminal and the reference terminal. A second transistor (118) has a current path coupled between the external terminal and the substrate. A third transistor (120) has a current path coupled between the substrate and the reference terminal.
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申请公布号 |
US8384127(B1) |
申请公布日期 |
2013.02.26 |
申请号 |
US20000498677 |
申请日期 |
2000.02.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;STEINHOFF ROBERT;BRODSKY JONATHAN S.;VROTSOS THOMAS A. |
发明人 |
STEINHOFF ROBERT;BRODSKY JONATHAN S.;VROTSOS THOMAS A. |
分类号 |
H01L29/747 |
主分类号 |
H01L29/747 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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