HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION

摘要

PURPOSE: A high voltage resistor having a high voltage junction termination is provided to prevent the breakdown voltage of a resistor by the P/N junction of doped wells with a field plate. CONSTITUTION: A first doped region is formed in a substrate(12). The first doped region and a second doped region form P/N junction(14). A first separation structure and a second separation structure are formed on the first doped region(16). A resistor is formed on the first separation structure(18). A field plate is formed on a part of the second separation structure(20). [Reference numerals] (12) Forming a first doped region in a substrate; (14) Forming second doped region in the substrate and binding the first and second doped regions; (16) Forming first and second separation structures on the first doped region; (18) Forming a resister device on the first separation structure; (20) Forming a field plate on the second separation structure; (AA) Start; (BB) End