发明名称 |
METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUNDS |
摘要 |
PURPOSE: A method for preventing the growth of intermetallic compound is provided to react a solder foil film with a metal pad layer. CONSTITUTION: A substrate element is prepared(S101). At least one metal pad layer is laminated on a substrate(S201). At least one solder layer is laminated on the metal pad layer(S301). Intermetallic compound is formed on the solder layer(S401). A solder bump with proper thickness is laminated on the substrate element(S501). The substrate element is bonded to other parts by performing a bonding process(S600). [Reference numerals] (S101) Substrate; (S201) Laminating a metal pad layer; (S301) Laminating a solder layer; (S401) Forming intermetallic compound; (S501) Laminating a solder with proper thickness; (S600) Bonding process |
申请公布号 |
KR20130018542(A) |
申请公布日期 |
2013.02.25 |
申请号 |
KR20120081954 |
申请日期 |
2012.07.26 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHIH CHEN;KING NING TU;HSIANG YAO HSIAO |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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