发明名称 POWER AMPLIFIER
摘要 <P>PROBLEM TO BE SOLVED: To provide a power amplifier which easily controls a resistance value of a resistor absorbing oscillation power. <P>SOLUTION: A power amplifier 10 according to this invention comprises: a semiconductor substrate 12 where multiple transistor cells are formed; a drain electrode 40 of the multiple transistor cells which are formed on the semiconductor substrate; a drain pad 42 formed on the semiconductor substrate so as to connect with the drain electrode; an ion implantation resistor 44 formed on the semiconductor substrate so as to be arranged along and contact with the drain pad; a floating electrode 46 formed on the semiconductor substrate so as to contact with the drain pad through the ion implantation resistor; an output matching circuit 16 formed on the exterior of the semiconductor substrate; and wiring 18a, 18b, 18c, 18d connecting the drain pad with the output matching circuit. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013038121(A) 申请公布日期 2013.02.21
申请号 JP20110170860 申请日期 2011.08.04
申请人 MITSUBISHI ELECTRIC CORP 发明人
分类号 H01L21/822;H01L27/04;H03F3/20 主分类号 H01L21/822
代理机构 代理人
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