发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which can be easily manufactured while suppressing reduction in yield caused by substrate defects. <P>SOLUTION: Cell electrodes 150 are formed on a semiconductor substrate 130, and are provided one for each of cell structures CL. The cell electrodes 150 are separated into groups 150a to 150c, each including two or more cell electrodes 150. Conductive members 160a to 160c respectively are electrically connected to each of the groups 150a to 150c. The conductive members 160a to 160c have a used part UD and an unused part ND. The used part UD includes two or more conductive members 160a and 160b which are electrically connected to each other. The unused part UD includes at least one of the conductive members 160a to 160c and is electrically insulated from the used part UD. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013038351(A) 申请公布日期 2013.02.21
申请号 JP20110175472 申请日期 2011.08.11
申请人 SUMITOMO ELECTRIC IND LTD 发明人
分类号 H01L29/47;H01L21/76;H01L25/07;H01L25/18;H01L29/12;H01L29/78;H01L29/872 主分类号 H01L29/47
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