ORGANIC TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce contact resistance between a source-drain electrodes and an organic semiconductor layer; improve high-speed response performance by a shorter channel; and allow a short circuit between the source-drain electrodes and the gate electrode due to the shorter channel to be avoided.

SOLUTION: An organic transistor comprises: an insulating substrate; a pair of insulating pedestals 2, 3 arranged on the substrate at a distance from each other and each forming a pedestal flat surface; a source electrode 4 provided on the pedestal flat surface formed by one pedestal; a drain electrode 5 provided on the pedestal flat surface formed by the other pedestal; a gate electrode 6 provided on the substrate between the pair of pedestals; and an organic semiconductor layer 7 arranged to contact top faces of the source electrode and the drain electrode. The gate electrode and an undersurface of the organic semiconductor layer face each other in a vertical direction with sandwiching a gap region 8. A pedestal lateral face facing the gap region has a shape such that a lower side end retreats to a side distanced from the gate electrode in comparison with an upper side end.

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