THIN FILM TRANSISTOR, METHOD FOR PRODUCING SAME, DISPLAY DEVICE, IMAGE SENSOR, X-RAY SENSOR, AND X-RAY DIGITAL IMAGING DEVICE

摘要

This thin film transistor has: a gate electrode; a gate insulating film that contacts the gate electrode; an oxide semiconductor layer that is disposed facing the gate electrode with the gate insulating film therebetween, and that contains a first region, which is represented by In(a)Ga(b)Zn(c)O(d) (where 0 < a = 37/60, 3a/7 - 3/14 = b = 91a/74 - 17/40, and where b > 0, 0 < c = 3/5, a+b+c = 1, and d > 0), and a second region, which is represented by In(p)Ga(q)Zn(r)O(s) (where q/(p+q) > 0.250, p > 0, q > 0, r > 0, and s > 0) and is positioned further from the gate electrode than the first region is; and a source electrode and drain electrode that are disposed separated from each other and can interconduct via the oxide semiconductor layer.