发明名称 |
NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
<p>The objective of the present invention is to provide a nitride semiconductor device that prevents breakdown of a gate insulating film and is capable of normally-off bidirectional operation having increased reliability. A nitride semiconductor element (10) is provided with a first MOSFET unit (30) and a second MOSFET unit (31); and a first SBD metal electrode (28) and a second SBD metal electrode (29) provided between a first gate electrode (26) and a second gate electrode (27) form a Schottky junction with an AlGaN layer (20). Also, the first SBD metal electrode (28) and a first electrode (24) are connected and are electrically shorted, and the second SBD metal electrode (29) and a second electrode (25) are connected and are electrically shorted.</p> |
申请公布号 |
WO2013024752(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
WO2012JP70119 |
申请日期 |
2012.08.07 |
申请人 |
ADVANCED POWER DEVICE RESEARCH ASSOCIATION;UENO, KATSUNORI |
发明人 |
UENO, KATSUNORI |
分类号 |
H01L27/095;H01L21/336;H01L21/8234;H01L27/088;H01L29/78 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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