SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor using an oxide semiconductor which has high electron field-effect mobility, less variation in threshold voltage, and high reliability.

SOLUTION: A semiconductor device comprises a transistor including an insulator substrate discharging oxygen by heat treatment, an oxide semiconductor film provided on the insulator substrate, and a channel formed in the oxide semiconductor film. The insulator substrate discharging oxygen by heat treatment can be manufactured by performing oxygen ion implantation at least on a side of the insulator substrate on which the oxide semiconductor film is provided.

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