| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide film removing method capable of increasing the etching amount without reducing the uniformity of etching amount on the wafer surface, and to provide a batch type semiconductor device manufacturing apparatus for use in this method. <P>SOLUTION: A dry etching step including a first step for making hydrogen fluoride and ammonium fluoride react with an oxide film on a silicon wafer surface, and a second step for removing the reaction products produced by this reaction by heating and evaporating at 200-530°C is performed while setting the interval of adjoining silicon wafers to 2-5 mm. The batch type semiconductor device manufacturing apparatus has: a wafer boat comprising an etching chamber, a microwave excitation mechanism, a load lock chamber, and a clean booth and capable of mounting the processed silicon wafers at an interval of 2-5 mm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
